Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SR502HB0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	2753	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 125°C	550 mV @ 5 A
SFAF807G C0G DIODE GEN PURP 500V 8A ITO220AC Taiwan Semiconductor Corporation	3515	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
BYM07-150HE3/83 DIODE GEN PURP 150V 500MA DO213 Vishay General Semiconductor - Diodes Division	3314	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, Superectifier®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	7pF @ 4V, 1MHz	50 ns	5 µA @ 150 V	150 V	500mA	-65°C ~ 175°C	1.25 V @ 500 mA
ES1BLHRFG DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	2025	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER206G B0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	2184	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SS23L RQG DIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation	2844	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR503 B0G DIODE SCHOTTKY 30V 5A DO201AD Taiwan Semiconductor Corporation	3667	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 30 V	30 V	5A	-55°C ~ 125°C	550 mV @ 5 A
SFAF807GHC0G DIODE GEN PURP 500V 8A ITO220AC Taiwan Semiconductor Corporation	3804	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
EGF1B-1HE3/5CA DIODE GEN PURP 100V 1A DO214BA Vishay General Semiconductor - Diodes Division	2020	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, Superectifier®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	15pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1 V @ 1 A
ES1C R3G DIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation	2686	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 1V, 1MHz	35 ns	5 µA @ 150 V	150 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER207G B0G DIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation	3373	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SS23L RTG DIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation	2804	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR503HB0G DIODE SCHOTTKY 30V 5A DO201AD Taiwan Semiconductor Corporation	3904	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	5A	-55°C ~ 125°C	550 mV @ 5 A
SFAF808GHC0G DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation	3105	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
EGF1B-1HE3/67A DIODE GEN PURP 100V 1A DO214BA Vishay General Semiconductor - Diodes Division	3813	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, Superectifier®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	15pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1 V @ 1 A
ES1CHR3G DIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation	3753	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER208G B0G DIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation	3323	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	-	2A	-55°C ~ 150°C	1.7 V @ 2 A
SS23LHMQG DIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation	3356	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR504 B0G DIODE SCHOTTKY 40V 5A DO201AD Taiwan Semiconductor Corporation	2813	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 40 V	40 V	5A	-55°C ~ 125°C	550 mV @ 5 A
SFF1001G C0G DIODE GEN PURP 50V 10A ITO220AB Taiwan Semiconductor Corporation	3996	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 5 A