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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SR310 B0G DIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation	3408	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF803G C0G DIODE GEN PURP 150V 8A ITO220AC Taiwan Semiconductor Corporation	3627	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR105 B0G DIODE SCHOTTKY 50V 1A DO204AL Taiwan Semiconductor Corporation	3912	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
ES1AHR3G DIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation	2680	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER157G B0G DIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation	3664	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	1.5A	-55°C ~ 150°C	1 V @ 1.5 A
SS22L RTG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2280	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR310HB0G DIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation	2407	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF803GHC0G DIODE GEN PURP 150V 8A ITO220AC Taiwan Semiconductor Corporation	3194	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR105HB0G DIODE SCHOTTKY 50V 1A DO204AL Taiwan Semiconductor Corporation	2750	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
ES1AL R3G DIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation	2169	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 1V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER158G B0G DIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation	2592	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	-	1.5A	-55°C ~ 150°C	1 V @ 1.5 A
SS22LHMQG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2456	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR315 B0G DIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation	2502	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF804G C0G DIODE GEN PURP 200V 8A ITO220AC Taiwan Semiconductor Corporation	3142	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR106 B0G DIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation	2205	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	1A	-55°C ~ 150°C	700 mV @ 1 A
ES1AL RFG DIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation	3599	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 1V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER201G B0G DIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation	3382	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	2A	-55°C ~ 150°C	1 V @ 2 A
SS22LHMTG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2110	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR315HB0G DIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation	2407	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF804GHC0G DIODE GEN PURP 200V 8A ITO220AC Taiwan Semiconductor Corporation	3702	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	950 mV @ 8 A