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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STB30N65M2AG

STB30N65M2AG

MOSFET N-CH 650V 20A D2PAK

STMicroelectronics

3129 4.44
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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 30.8 nC @ 10 V ±25V 1440 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP42AN15A0

FDP42AN15A0

MOSFET N-CH 150V 5A/35A TO220-3

onsemi

2072 2.67
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FDP42AN15A0

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Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Ta), 35A (Tc) 6V, 10V 42mOhm @ 12A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 2150 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB32NM50N

STB32NM50N

MOSFET N CH 500V 22A D2PAK

STMicroelectronics

2971 4.45
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STB32NM50N

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 130mOhm @ 11A, 10V 4V @ 250µA 62.5 nC @ 10 V ±25V 1973 pF @ 50 V - 190W (Tc) 150°C (TJ) Surface Mount
RJ1G12BGNTLL

RJ1G12BGNTLL

MOSFET N-CH 40V 120A LPTL

Rohm Semiconductor

2642 5.06
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RJ1G12BGNTLL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.86mOhm @ 50A, 10V 2.5V @ 2mA 165 nC @ 10 V ±20V 12500 pF @ 20 V - 178W (Tc) 150°C (TJ) Surface Mount
CSD19533KCS

CSD19533KCS

MOSFET N-CH 100V 100A TO220-3

Texas Instruments

2950 1.93
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CSD19533KCS

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Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 6V, 10V 10.5mOhm @ 55A, 10V 3.4V @ 250µA 35 nC @ 10 V ±20V 2670 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB33N65M2

STB33N65M2

MOSFET N-CH 650V 24A D2PAK

STMicroelectronics

2294 4.46
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STB33N65M2

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Tape & Reel (TR),Cut Tape (CT) MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 140mOhm @ 12A, 10V 4V @ 250µA 41.5 nC @ 10 V ±25V 1790 pF @ 100 V - 190W (Tc) 150°C (TJ) Surface Mount
IRFBG30PBF

IRFBG30PBF

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix

3546 2.68
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IRFBG30PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF12N65E-GE3

SIHF12N65E-GE3

MOSFET N-CH 650V 12A TO220

Vishay Siliconix

2846 2.68
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SIHF12N65E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7748L1TRPBF

IRF7748L1TRPBF

MOSFET N-CH 60V 28A DIRECTFET

Infineon Technologies

3591 1.00
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IRF7748L1TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 148A (Tc) 10V 2.2mOhm @ 89A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 8075 pF @ 50 V - 3.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK40A10N1,S4X

TK40A10N1,S4X

MOSFET N-CH 100V 40A TO220SIS

Toshiba Semiconductor and Storage

3420 1.94
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TK40A10N1,S4X

Datenblatt

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 35W (Tc) 150°C (TJ) Through Hole
IPA50R190CEXKSA2

IPA50R190CEXKSA2

MOSFET N-CH 500V 18.5A TO220

Infineon Technologies

2326 1.00
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IPA50R190CEXKSA2

Datenblatt

Bulk,Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 32W (Tc) -40°C ~ 150°C (TJ) Through Hole
IXTP70N075T2

IXTP70N075T2

MOSFET N-CH 75V 70A TO220AB

IXYS

3930 2.71
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IXTP70N075T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 70A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2725 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA08N50D2

IXTA08N50D2

MOSFET N-CH 500V 800MA TO263

IXYS

3371 2.71
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IXTA08N50D2

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 800mA (Tc) - 4.6Ohm @ 400mA, 0V - 12.7 nC @ 5 V ±20V 312 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF6215STRL

AUIRF6215STRL

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies

3876 4.34
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AUIRF6215STRL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540NLPBF

IRF9540NLPBF

MOSFET P-CH 100V 23A TO262

Infineon Technologies

3268 2.72
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IRF9540NLPBF

Datenblatt

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1450 pF @ 25 V - 3.1W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLS3036TRLPBF

IRLS3036TRLPBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies

2710 4.34
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IRLS3036TRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180P04P4L02ATMA1

IPB180P04P4L02ATMA1

MOSFET P-CH 40V 180A TO263-7

Infineon Technologies

3747 4.95
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IPB180P04P4L02ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.4mOhm @ 100A, 10V 2.2V @ 410µA 286 nC @ 10 V ±16V 18700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180P04P4L02ATMA2

IPB180P04P4L02ATMA2

MOSFET P-CH 40V 180A TO263-7

Infineon Technologies

2604 4.95
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IPB180P04P4L02ATMA2

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.4mOhm @ 100A, 10V 2.2V @ 410µA 286 nC @ 10 V +5V, -16V 18700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS0D8N02P1ET1G

NTMFS0D8N02P1ET1G

MOSFET N-CH 25V 55A/365A 5DFN

onsemi

3781 3.72
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NTMFS0D8N02P1ET1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 25 V 55A (Ta), 365A (Tc) 4.5V, 10V 0.68mOhm @ 46A, 10V 2V @ 2mA 52 nC @ 4.5 V +16V, -12V 8600 pF @ 13 V - 3.2W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA15N80AE-GE3

SIHA15N80AE-GE3

MOSFET N-CH 800V 6A TO220

Vishay Siliconix

3094 2.73
- +

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Немедленный

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
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