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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STD5N95K5

STD5N95K5

MOSFET N-CH 950V 3.5A DPAK

STMicroelectronics

3811 2.59
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STD5N95K5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 3.5A (Tc) 10V 2.5Ohm @ 1.5A, 10V 5V @ 100µA 12.5 nC @ 10 V ±30V 220 pF @ 100 V - 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM40N10-30_GE3

SQM40N10-30_GE3

MOSFET N-CH 100V 40A TO263

Vishay Siliconix

3709 2.36
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SQM40N10-30_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 6V, 10V 30mOhm @ 15A, 10V 3.5V @ 250µA 62 nC @ 10 V ±20V 3345 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK4R3A06PL,S4X

TK4R3A06PL,S4X

MOSFET N-CH 60V 68A TO220SIS

Toshiba Semiconductor and Storage

2219 1.40
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TK4R3A06PL,S4X

Datenblatt

Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 68A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 4.5V 2.5V @ 500µA 48.2 nC @ 10 V ±20V 3280 pF @ 30 V - 36W (Tc) 175°C (TJ) Through Hole
STD16N65M2

STD16N65M2

MOSFET N-CH 650V 11A DPAK

STMicroelectronics

3659 2.60
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STD16N65M2

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 19.5 nC @ 10 V ±25V 718 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK650A60F,S4X

TK650A60F,S4X

MOSFET N-CH 600V 11A TO220SIS

Toshiba Semiconductor and Storage

3425 1.41
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TK650A60F,S4X

Datenblatt

Tube U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1.16mA 34 nC @ 10 V ±30V 1320 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK30E06N1,S1X

TK30E06N1,S1X

MOSFET N-CH 60V 43A TO220

Toshiba Semiconductor and Storage

3640 1.02
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TK30E06N1,S1X

Datenblatt

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Ta) 10V 15mOhm @ 15A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1050 pF @ 30 V - 53W (Tc) 150°C (TJ) Through Hole
IPA70R600P7SXKSA1

IPA70R600P7SXKSA1

MOSFET N-CH 700V 8.5A TO220

Infineon Technologies

3222 1.00
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IPA70R600P7SXKSA1

Datenblatt

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 25W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPAN70R600P7SXKSA1

IPAN70R600P7SXKSA1

MOSFET N-CH 700V 8.5A TO220

Infineon Technologies

3191 1.00
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IPAN70R600P7SXKSA1

Datenblatt

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 24.9W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF520SPBF

IRF520SPBF

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix

2288 1.42
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IRF520SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7613-100E,118

BUK7613-100E,118

MOSFET N-CH 100V 72A D2PAK

Nexperia USA Inc.

3869 2.40
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BUK7613-100E,118

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 72A (Tc) 10V 13mOhm @ 20A, 10V 4V @ 1mA 97.2 nC @ 10 V ±20V 4533 pF @ 20 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC031N06NS3GATMA1

BSC031N06NS3GATMA1

MOSFET N-CH 60V 100A TDSON-8-1

Infineon Technologies

2478 2.88
- +

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BSC031N06NS3GATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.1mOhm @ 50A, 10V 4V @ 93µA 130 nC @ 10 V ±20V 11000 pF @ 30 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS6H801NT1G

NVMFS6H801NT1G

MOSFET N-CH 80V 23A/157A 5DFN

onsemi

2786 2.91
- +

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Немедленный

NVMFS6H801NT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 23A (Ta), 157A (Tc) 10V 2.8mOhm @ 50A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 4120 pF @ 40 V - 3.8W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS3D6N10MCLT1G

NTMFS3D6N10MCLT1G

MOSFET N-CH 100V 19.5A/131A 5DFN

onsemi

2495 2.91
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NTMFS3D6N10MCLT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 19.5A (Ta), 131A (Tc) 4.5V, 10V 3.6mOhm @ 48A, 10V 3V @ 270µA 60 nC @ 10 V ±20V 4411 pF @ 50 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP7N20

FQP7N20

MOSFET N-CH 200V 6.6A TO220-3

onsemi

2118 1.44
- +

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FQP7N20

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 6.6A (Tc) 10V 690mOhm @ 3.3A, 10V 5V @ 250µA 10 nC @ 10 V ±30V 400 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD5NM60T4

STD5NM60T4

MOSFET N-CH 600V 5A DPAK

STMicroelectronics

3103 2.68
- +

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STD5NM60T4

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 1Ohm @ 2.5A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 400 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPWR7904PB,L1XHQ

TPWR7904PB,L1XHQ

MOSFET N-CH 40V 150A 8DSOP

Toshiba Semiconductor and Storage

3161 3.13
- +

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TPWR7904PB,L1XHQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Ta) 6V, 10V 0.79mOhm @ 75A, 10V 3V @ 1mA 85 nC @ 10 V ±20V 6650 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
SPD50P03LGBTMA1

SPD50P03LGBTMA1

MOSFET P-CH 30V 50A TO252-5

Infineon Technologies

2496 1.00
- +

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SPD50P03LGBTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 10V 7mOhm @ 50A, 10V 2V @ 250µA 126 nC @ 10 V ±20V 6880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMYS3D3N06CLTWG

NVMYS3D3N06CLTWG

MOSFET N-CH 60V 26A/133A 4LFPAK

onsemi

2997 3.17
- +

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NVMYS3D3N06CLTWG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 133A (Tc) 4.5V, 10V 3mOhm @ 50A, 10V 2V @ 250µA 40.7 nC @ 10 V ±20V 2880 pF @ 25 V - 3.9W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU210PBF

IRFU210PBF

MOSFET N-CH 200V 2.6A TO251AA

Vishay Siliconix

9000 1.45
- +

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Немедленный

IRFU210PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU014PBF

IRFU014PBF

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix

3497 1.45
- +

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Немедленный

IRFU014PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
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