Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
S3J V7G DIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation	1696	0.82	- + Добавить Немедленный	Datenblatt	Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 600 V	600 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
STPSC10H065DY DIODE SCHOTTKY 650V 10A TO220AC STMicroelectronics	173	3.53	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101, ECOPACK®2	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Silicon Carbide Schottky	Active	Through Hole	480pF @ 0V, 1MHz	-	100 µA @ 650 V	650 V	10A	-40°C ~ 175°C	1.75 V @ 10 A
S3D V7G DIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation	1667	0.82	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
VS-8EWF04S-M3 DIODE GEN PURP 400V 8A TO252AA Vishay General Semiconductor - Diodes Division	1982	3.56	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	55 ns	100 µA @ 400 V	400 V	8A	-40°C ~ 150°C	1.2 V @ 8 A
S3M V7G DIODE GEN PURP 1KV 3A DO214AB Taiwan Semiconductor Corporation	1655	0.82	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 1000 V	1000 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
STTH30L06WY DIODE GEN PURP 600V 30A DO247 STMicroelectronics	267	3.63	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	90 ns	25 µA @ 600 V	600 V	30A	-40°C ~ 175°C	1.55 V @ 30 A
SE12DJ-M3/I DIODE GEN PURP 600V 3.2A TO263AC Vishay General Semiconductor - Diodes Division	1145	0.82	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	90pF @ 4V, 1MHz	3 µs	20 µA @ 600 V	600 V	3.2A	-55°C ~ 175°C	1.15 V @ 12 A
C6D06065A 6A 650V G6 ZREC SIC SCHOTTKY DIO Wolfspeed, Inc.	399	3.82	- + Добавить Немедленный	Datenblatt	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	394pF @ 0V, 1MHz	0 ns	30 µA @ 650 V	650 V	24A (DC)	-55°C ~ 175°C	1.5 V @ 6 A
TSPB15U50S S1G DIODE SCHOTTKY 50V 15A SMPC4.0 Taiwan Semiconductor Corporation	2528	0.82	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	2 mA @ 50 V	50 V	15A	-55°C ~ 150°C	560 mV @ 15 A
MSC010SDA120K DIODE SCHOTTKY 1.2KV 10A TO220-2 Microchip Technology	121	3.92	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	-	0 ns	-	1200 V	10A (DC)	-	1.5 V @ 10 A
PMEG100T100ELPE-QZ PMEG100T100ELPE-Q/SOT1289B/CFP Nexperia USA Inc.	3014	0.83	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	850pF @ 1V, 1MHz	22 ns	5 µA @ 100 V	100 V	10A	175°C	810 mV @ 10 A
VS-35EPF12LHM3 DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	232	3.99	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	450 ns	100 µA @ 1200 V	1200 V	35A	-40°C ~ 150°C	1.47 V @ 35 A
MUR480ERLG DIODE GEN PURP 800V 4A AXIAL onsemi	2395	0.84	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	SWITCHMODE™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	25 µA @ 800 V	800 V	4A	-65°C ~ 175°C	1.85 V @ 4 A
STTH806DTI DIODE GEN PURP 600V 8A TO220AC STMicroelectronics	609	4.04	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	30 ns	10 µA @ 600 V	600 V	8A	175°C (Max)	3.6 V @ 8 A
MBRD320T4G DIODE SCHOTTKY 20V 3A DPAK onsemi	1900	0.85	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	SWITCHMODE™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	200 µA @ 20 V	20 V	3A	-65°C ~ 150°C	600 mV @ 3 A
VS-EPU6006-N3 DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	276	4.05	- + Добавить Немедленный	Datenblatt	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	110 ns	30 µA @ 600 V	600 V	60A	-65°C ~ 175°C	1.5 V @ 60 A
NRVTS10100MFST1G DIODE SCHOTTKY 100V 10A 5DFN onsemi	1500	0.85	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	50 µA @ 100 V	100 V	10A	-55°C ~ 175°C	720 mV @ 10 A
SCS315AHGC9 SHORTER RECOVERY TIME, ENABLING Rohm Semiconductor	953	4.08	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	750pF @ 1V, 1MHz	0 ns	75 µA @ 650 V	650 V	15A (DC)	175°C (Max)	-
STPS5L40RL DIODE SCHOTTKY 40V 5A DO201AD STMicroelectronics	1384	0.85	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 40 V	40 V	5A	150°C (Max)	500 mV @ 5 A
FFH50US60S-F085 DIODE GEN PURP 600V 50A TO247-2 onsemi	533	4.09	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101, Stealth™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	163 ns	100 µA @ 600 V	600 V	50A	-55°C ~ 175°C	1.69 V @ 50 A