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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
FR301G B0G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	3395	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	150 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SFAF2008G C0G DIODE GEN PURP 600V 20A ITO220AC Taiwan Semiconductor Corporation	2803	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	150pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	20A	-55°C ~ 150°C	1.7 V @ 20 A
SR209 B0G DIODE SCHOTTKY 90V 2A DO204AC Taiwan Semiconductor Corporation	3829	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
SK52B M4G DIODE SCHOTTKY 20V 5A DO214AA Taiwan Semiconductor Corporation	2736	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 20 V	20 V	5A	-55°C ~ 150°C	550 mV @ 5 A
SR002 B0G DIODE SCHOTTKY 20V 500MA DO204AL Taiwan Semiconductor Corporation	2194	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	500 µA @ 20 V	20 V	500mA	-55°C ~ 125°C	550 mV @ 500 mA
SR103 R0G DIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation	2762	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A
FR302G B0G DIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation	3230	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SFAF2008GHC0G DIODE GEN PURP 600V 20A ITO220AC Taiwan Semiconductor Corporation	3862	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	150pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	20A	-55°C ~ 150°C	1.7 V @ 20 A
SR209HB0G DIODE SCHOTTKY 90V 2A DO204AC Taiwan Semiconductor Corporation	3621	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
SK52BHM4G DIODE SCHOTTKY 20V 5A DO214AA Taiwan Semiconductor Corporation	2520	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 20 V	20 V	5A	-55°C ~ 150°C	550 mV @ 5 A
SR002HB0G DIODE SCHOTTKY 20V 500MA DO204AL Taiwan Semiconductor Corporation	3735	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	500 µA @ 20 V	20 V	500mA	-55°C ~ 125°C	550 mV @ 500 mA
SR103HR0G DIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation	3117	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A
FR303G B0G DIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation	2379	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SFAF501G C0G DIODE GEN PURP 50V 5A ITO220AC Taiwan Semiconductor Corporation	2543	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	5A	-55°C ~ 150°C	975 mV @ 5 A
SR210 B0G DIODE SCHOTTKY 100V 2A DO204AC Taiwan Semiconductor Corporation	3578	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	2A	-55°C ~ 150°C	850 mV @ 2 A
SK55B M4G DIODE SCHOTTKY 50V 5A DO214AA Taiwan Semiconductor Corporation	2260	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 150°C	750 mV @ 5 A
SR003 B0G DIODE SCHOTTKY 30V 500MA DO204AL Taiwan Semiconductor Corporation	2567	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	500 µA @ 30 V	30 V	500mA	-55°C ~ 125°C	550 mV @ 500 mA
SR105 R0G DIODE SCHOTTKY 50V 1A DO204AL Taiwan Semiconductor Corporation	2055	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
FR304G B0G DIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation	2576	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SFAF501GHC0G DIODE GEN PURP 50V 5A ITO220AC Taiwan Semiconductor Corporation	2714	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	5A	-55°C ~ 150°C	975 mV @ 5 A